SGC-6289Z Datasheet | RF Micro Devices

Description RFMD’s SGC-6289Z is a high performance Si Ge HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6289Z does not require a dropping resistor as pared to traditional Darlington amplifiers. The SGC-6289Z product is designed for high linearity 5V gain block applications that require small size and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS - Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Gain, RL & NF versus Frequency 20 S21 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25°C -10 S22 -20 S11 -30 -40 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Gain IRL ORL 3.0 3.5 Features - Single Supply Operation: 5V at ID = 83m A - No Dropping Resistor Required - Patented Self Bias Circuitry - Gain = 13.5d Bm at 1950MHz - P1d B = 19.2d Bm at 1950MHz - IP3 = 33.5d Bm at 1950MHz - Robust 1000V ESD, Class 1C Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS - IF Amplifier - Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition...