RF Micro Devices SGC4363Z
SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4363Z does not require a dropping resistor as compared to typical Darlington amplifiers.| Part No. | SGC4363Z |
|---|---|
| Datasheet | SGC4363Z Download |
| Manufacturer |  RF Micro Devices |
| Description | high performance SiGe HBT MMIC amplifier |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s The SGC4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain, RL (dB) Gain & Return Loss VD = 3V, ID = 54mA 30 S21 20 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S22 -20 S11 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 4FEATURES
● Single Fixed 3V Supply● No Dropping Resistor Required
● Patented Self-Bias Circuitry
● P1dB=12.4dBm at 1950MHz
● OIP3=26.5dBm at 1950MHz
● Robust 1000V ESD, Class 1C HBM
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS, WCDMA
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain, (G) 15.6 17.1 18.6 dB 850MHz 11.2 12.7 14.2 dB 1950MHz 11.8 dB 2400MHz Output Power at 1dB Compression (P1dB) 11.4 13.3 12.4 dBm dBm 850 M...
