SiW4000 Datasheet | RF Micro Devices

features include a shutdown mode reducing current consumption even when connected directly to a battery. The Si W4000 consumes up to three times less power than previous generations of RFMD Bluetooth chips. Increased Data Throughput The Si W4000 features Enhanced Data Rate, providing data transfer rates of 2 and 3Mbps, which are double and triple the data speeds of current Bluetooth V1.2 solutions. This higher data throughput enables more efficient bandwidth utilization, which not only lowers power but also broadens the applications for Bluetooth technology. The Si W4000 is fully backward patible with Bluetooth V1.1 and V1.2 devices. Excellent RF Performance The direct conversion architecture of the Si W4000 enhances RF performance by reducing spurious emissions and providing superior RF blocking characteristics. The powerful, full-featured ARM7TDMI® processor-based baseband delivers all the mandatory and optional features in Bluetooth V1.2, including adaptive frequency hopping for coexistence with 802.11 and extended SCO (e SCO) for better audio performance. Lower Bill of Materials (BOM) Reduced Size .. Based on 0.13 micron CMOS process technology, the Si W4000 features a footprint up to 40 percent smaller than petitive products on the market. The reduced die size of the Si W4000 and the need for very few external passives make the footprint ideally suited for direct printed circuit board (PCB) assembly. The Si W4000 was designed to lower a customer’s total system bill-of-materials costs. Requiring only six capacitors, one inductor and a band pass filter externally in a typical mobile phone application, the Si W4000 reduces the number of ponents a customer needs to buy and insert on their PCB. Additionally, the Si W4000’s internal 50 Ohm RF matching circuits and higher performance margins mean that no tuning is required in development or production. Customers not only save on total ponent costs, but also save during the design and manufacturing process. Features :   0.13...