SGA0363Z Datasheet | RF Micro Devices

Description The SGA0363Z is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS - Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS d B Small Signal Gain vs. Frequency 0 0123456 Frequency GHz Features - DC to 5000MHz Operation - Single Voltage Supply - Low Current Draw: 11m A at 2.5V Typ. - High Output Intercept: 14d Bm Typ. at 1950MHz Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS - IF Amplifier - Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Output Power at 1d B pression 2.3 d Bm 850 MHz 2.3 d Bm 1950 MHz 1.6 d Bm 2400 MHz Third Order Intercept Point 14.2 d Bm 850...