SGA1263Z Datasheet | RF Micro Devices

Description RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (Si Ge HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40d B at 2GHz and is fabricated using the latest Si Ge HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1d B gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands. Matching® Applied Ga As HBT Ga As MESFET Isolation vs. Frequency In Ga P HBT 0 Si Ge Bi CMOS Si Bi CMOS - Si Ge HBT Ga As p HEMT -2 0 d B -4 0 Si CMOS -6 0 Si BJT Ga N HEMT -8 0 100 500 900 1900 2400 3500 6000 In P HBT RF MEMS LDMOS Frequency MHz Features - DCto4000MHz Operation - Single Supply Voltage - Excellent Isolation, >50d B at 900 MHz - 50 In/Out, Broadband Match for Operation from DC4 GHz - Unconditionally Stable Applications - Buffer Amplifier for Oscillator Applications - Broadband Gain Blocks - IF Amp Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15 17 19 d B 850MHz 12 15 17 d B 1950MHz Output Power at 1d B...