2SB1198KFRA - Power Transistor

ROHM

Key Features

1)Low VCE(sat) 　 VCE(sat)=-200mV(Typ. ) 　 (IC/IB=-500mA/-50mA) 2)High breakdown voltage. 　 BVCEO=-80V 3)Complements the 2SD1782K FRA. lOutline 　 SOT-346 　 SC-59 SMT3 lInner circuit Datasheet AEC-Q101 Qualified 　　　　　 l.

2SB1198KFRA power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1198KFRA
Manufacturer	ROHM
File Size	1.40 MB
Description	Power Transistor
Datasheet	2SB1198KFRA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1198K FRA Power Transistor (-80V, -500mA) Parameter VCEO IC Value -80V -500mA lFeatures 1)Low VCE(sat) 　 VCE(sat)=-200mV(Typ.) 　 (IC/IB=-500mA/-50mA) 2)High breakdown voltage. 　 BVCEO=-80V 3)Complements the 2SD1782K FRA. lOutline 　 SOT-346 　 SC-59 SMT3 lInner circuit Datasheet AEC-Q101 Qualified 　　　　　 lApplication DRIVER lPackaging specifications Part No. Package SOT-346 2SB1198K FRA (SMT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 2928 T146 180 8 3000 AK 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160909 - Rev.