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BA12004DF-Z - Darlington Transistor Array

Download the BA12004DF-Z datasheet PDF. This datasheet also covers the BA12003DF-Z variant, as both devices belong to the same darlington transistor array family and are provided as variant models within a single manufacturer datasheet.

General Description

BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Key Features

  • Built-in 7 circuits.
  • High output break down voltage.
  • High DC output current gain.
  • Built-in input resistor to limit base current.
  • Built-in output surge absorption clamp diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BA12003DF-Z-ROHM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BA12004DF-Z
Manufacturer ROHM
File Size 1.55 MB
Description Darlington Transistor Array
Datasheet download datasheet BA12004DF-Z Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet 7 Circuits Darlington Transistor Array BA12003DF-Z BA12004DF-Z General Description BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003DF-Z Rin=2.