1) Low on-resistance. lInner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source.
1 BODY DIODE
t 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Tube
Reel size (mm)
-
le l.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
R6035ENZ1
Nch 600V 35A Power MOSFET
Data Sheet
lOutline
VDSS RDS(on) (Max.)
600V 0.102W
TO-247
ID
35A
PD
120W
(1) (2) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
e 4) Drive circuits can be simple.
5) Parallel use is easy.