RB228T100FH
Features
1) Cathode mon dual type 2) Low IR 3) High reliability
10.0±00..31
3.2±0.2
12.0±0.2
15.0±00..24
2.8±00..21 for (1)
(3)
Anode Anode d
- Construction nde s Silicon epitaxial planar type
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
2.6±0.5 0.75±00..015 me sign
- Absolute Maximum Ratings (Tc= 25°C) m Parameter
Symbol e Repetitive peak reverse voltage
VRM o D Reverse voltage
VR c Average forward rectified current
Io e w Non-repetitive forward current surge peak IFSM
R e Operating junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=83ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
- -
Limits Unit
°C
- 40 to 150 °C ot N
- Electrical Characteristics (Tj= 25°C)
N Parameter
Symbol
Conditions...
