• Part: RB228T100NZ
  • Description: Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: ROHM
  • Size: 1.33 MB
Download RB228T100NZ Datasheet PDF
ROHM
RB228T100NZ
Features 1) Cathode mon dual type 2) Low IR 3) High reliability - Structure Cathode (2) (1) (3) Anode Anode - Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date - Package Dimensions (Unit : mm) - Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg - Electrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=83ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode - - Limits...