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RB228T100NZ - Schottky Barrier Diode

Key Features

  • 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet.
  • Structure Cathode (2) (1) (3) Anode Anode.
  • Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date.
  • Package Dimensions (Unit : mm) 7 540 34.5.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj.

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Datasheet Details

Part number RB228T100NZ
Manufacturer ROHM
File Size 1.33 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB228T100NZ Datasheet

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Other Datasheets by ROHM

Part Number Description
RB228T100 Schottky Barrier Diode
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RB228T150FH Schottky Barrier Diode
RB228T150NZ Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB228T100NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet Structure Cathode (2) (1) (3) Anode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Electrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) Conditions Duty≦0.