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RB228T100NZ - Schottky Barrier Diode

Features

  • 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet.
  • Structure Cathode (2) (1) (3) Anode Anode.
  • Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date.
  • Package Dimensions (Unit : mm) 7 540 34.5.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj.

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Datasheet Details

Part number RB228T100NZ
Manufacturer ROHM
File Size 1.33 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB228T100NZ Datasheet
Additional preview pages of the RB228T100NZ datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diode RB228T100NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet Structure Cathode (2) (1) (3) Anode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Electrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Thermal resistance VF IR Rth(j-c) Conditions Duty≦0.
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