RB228T100
Schottky Barrier Diode
Data Sheet l Applications l Dimensions (Unit : mm) l Structure
Switching power supply
4.5±00..31
Cathode (2)
5.0±0.2
8.0±0.2 l Features 1) Cathode mon dual type 2) Low IR 3) High reliability
10.0±00..31 f3.2±0.2
12.0±0.2
15.0±00..24
2.8±00..21 for (1)
(3)
Anode Anode d l Construction nde s Silicon epitaxial planar type
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
2.6±0.5 0.75±00..015 me sign l Absolute Maximum Ratings (Tc= 25°C) m Parameter
Symbol e Repetitive peak reverse voltage
VRM o D Reverse voltage
VR c Average forward rectified current
Io e w Non-repetitive forward current surge peak IFSM
R e Operating junction temperature
Tj
Storage temperature
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=83ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
- -
Limits...
