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RB521ZS-40 - Schottky Barrier Diode

Key Features

  • 1) Ultra small mold type (GMD2) 2) High reliability 3) Super low VF lConstruction M 0~0.03 0.3±0.05 0.3±0.03 ROHM : GMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.27±0.03 lTaping Dimensions (Unit : mm) GMD2 lStructure y(1) Cathode Bu(2) Anode Silicon epitaxial planar type e im lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits T Repetitive peak reverse voltage VRM Duty≦0.5 40 Reverse voltage VR Direct reverse voltage 40 t Average forward rectif.

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Datasheet Details

Part number RB521ZS-40
Manufacturer ROHM
File Size 574.34 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB521ZS-40 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB521ZS-40 lApplication Small current rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.31 0.6±0.05 0.19±0.03 0.38±0.03 0.57±0.05 0.23 0.38 lFeatures 1) Ultra small mold type (GMD2) 2) High reliability 3) Super low VF lConstruction M 0~0.03 0.3±0.05 0.3±0.03 ROHM : GMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.27±0.03 lTaping Dimensions (Unit : mm) GMD2 lStructure y(1) Cathode Bu(2) Anode Silicon epitaxial planar type e im lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits T Repetitive peak reverse voltage VRM Duty≦0.