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RB521ZS8A30 - Schottky barrier diode

General Description

] ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics.

Key Features

  • EUltra-small mold type. EMulti-diodes package. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Average rectified forward current IO(A) Forward current surge peak IFSM(A) Junction temperature Tj(ºC) Storage temperature Tstg(ºC) Standard value 30 30 0.1 0.5 60Hz/1cyc 150 -55 to +150 Conditions 1.6x0.8(t=0.3) Dimensions Equivalent circuit diagram.
  • The contents described here are just outline for intr.

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Datasheet Details

Part number RB521ZS8A30
Manufacturer ROHM
File Size 177.84 KB
Description Schottky barrier diode
Datasheet download datasheet RB521ZS8A30 Datasheet

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RB521ZS8A30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 www.DataSheet4U.com Schottky Barrier Diodes RB521ZS8A30 [ Product description ] ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. Outline Features EUltra-small mold type. EMulti-diodes package. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Average rectified forward current IO(A) Forward current surge peak IFSM(A) Junction temperature Tj(ºC) Storage temperature Tstg(ºC) Standard value 30 30 0.1 0.5 60Hz/1cyc 150 -55 to +150 Conditions 1.6x0.8(t=0.