1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability.
Construction Silicon epitaxial planer
0. 6 1.7
0.8
y EMD2 Bu.
Structure
e.
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05 φ1.55±0.05
Tim 00.9.905±±0.005.06 0
Empty pocket 4.0±0.1
2.0±0.05
2.2.4405±±0.0.015 11..235±0.0066
0
st.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
a Average rectified forward current
Io
30
V
100
mA
Forward current.
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Data Sheet
Schottky barrier Diode
AEC-Q101 Qualified
RB530S-30FH
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
General rectification
Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability
Construction Silicon epitaxial planer
0. 6 1.7
0.8
y EMD2 Bu Structure
e
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05 φ1.55±0.05
Tim 00.9.905±±0.005.06 0
Empty pocket 4.0±0.1
2.0±0.05
2.2.4405±±0.0.015 11..235±0.0066
0
st Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
a Average rectified forward current
Io
30
V
100
mA
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
LStorage temperature
Tstg
500
mA
125
C
-40 to +125
C
φ0.5
0.6 3.5±0.05 8.0±0.
RB530S-30FH Datasheet
