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RB530S-30 - Schottky Barrier Diode

Key Features

  • 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2.
  • Construction Silicon epitaxial planer.
  • Structure.
  • Taping specifications (Unit : mm).
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg.
  • Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125.

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Datasheet Details

Part number RB530S-30
Manufacturer ROHM
File Size 371.35 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB530S-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Schottky barrier Diode RB530S-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125 Unit V mA mA C C Symbol VF IR Min. - Typ. - Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.