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RB530CM-60 - Schottky Barrier Diode

Key Features

  • 1) Small mold type (VMN2M) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 0~0.10 (2) 0.22±0.05 0.60±0.05 0.16±0.05 ROHM : VMN2M : Manufacture year/ week/ factory lTaping Dimensions (Unit : mm) f1.55±0.05 4.0±0.05 2.0±0.05 1.75±0.1 VMN2M (1) Cathode lStructure (2) Anode 0.2±0.05 1.1±0.05 3.5±0.05 8.0±0.1 (2.75) 2.0±0.05 f0.5±0.05 0.7±0.05 0.47±0.05 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse v.

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Datasheet Details

Part number RB530CM-60
Manufacturer ROHM
File Size 507.68 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB530CM-60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB530CM-60 lApplication General rectification lDimensions (Unit : mm) 0.37±0.05 (1) Data Sheet lLand Size Figure (Unit : mm) 0.55 0.86±0.05 1.00±0.05 (0.26±0.05) 0.45 0.5 lFeatures 1) Small mold type (VMN2M) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 0~0.10 (2) 0.22±0.05 0.60±0.05 0.16±0.05 ROHM : VMN2M : Manufacture year/ week/ factory lTaping Dimensions (Unit : mm) f1.55±0.05 4.0±0.05 2.0±0.05 1.75±0.1 VMN2M (1) Cathode lStructure (2) Anode 0.2±0.05 1.1±0.05 3.5±0.05 8.0±0.1 (2.75) 2.0±0.05 f0.5±0.05 0.7±0.05 0.47±0.05 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.