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RBQ10T65ANZ - Schottky Barrier Diode

Features

  • 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.2±0.2 ① Datasheet.
  • Structure (1) (2) (3) Anode Cathode Anode.
  • Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date.
  • Packing Dimensions (Unit : mm) 7 540 34.5.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction.

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Datasheet Details

Part number RBQ10T65ANZ
Manufacturer ROHM
File Size 1.25 MB
Description Schottky Barrier Diode
Datasheet download datasheet RBQ10T65ANZ Datasheet
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Schottky Barrier Diode RBQ10T65ANZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.2±0.2 ① Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date Packing Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≦0.5 Direct Reverse Voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc= 130°C Max.
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