RBQ10T65A - Schottky Barrier Diode

Features

) Cathode common type. 2) Low IR 3) High reliability.
Construction Silicon epitaxial planar.
Dimensions (Unit : mm) 4.5±00..31 10.0±00..31 φ3.2±0.2 2.8±00..21 0.4 0.2 15.0± 12.0±0.2 ① 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN ① : Manufacture date Datasheet.
Structure (1) (2) (3) Anode Cathode Anode.
Absolute maximum ratings (Tc= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified f.

Rohm

Datasheet Details

Part number	RBQ10T65A
Manufacturer	ROHM
File Size	822.89 KB
Description	Schottky Barrier Diode
Datasheet	RBQ10T65A Datasheet
Additional preview pages of the RBQ10T65A datasheet.

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Full PDF Text Transcription

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5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2 Schottky Barrier Diode RBQ10T65A Application General rectification Features 1) Cathode common type. 2) Low IR 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 4.5±00..31 10.0±00..31 φ3.2±0.2 2.8±00..21 0.4 0.2 15.0± 12.0±0.2 ① 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 14.0±0.5 2.6±0.5 0.75±00..

Published: Apr 3, 2012 |