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RF2001NS3DFH - Super Fast Recovery Diode

Key Features

  • )Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type.
  • Construction Silicon epitaxial planer.
  • Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day.
  • Taping dimensions (Unit : mm) ①②③.
  • Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty.

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Datasheet Details

Part number RF2001NS3DFH
Manufacturer ROHM
File Size 924.92 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RF2001NS3DFH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RF2001NS3DFH Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Data Sheet AEC-Q101 Qualified Land size figure (Unit : mm) Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type Construction Silicon epitaxial planer Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Taping dimensions (Unit : mm) ①②③ Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.