Datasheet4U Logo Datasheet4U.com

RFN3BGE2S - Super Fast Recovery Diode

Datasheet Summary

Features

  • 1) Low switching loss 2) High current overload capacity ROHM : TO-252GE JEITA : - TO-252 2.3 2.3.
  • Structure Cathode.
  • Construction Silicon epitaxial planar type.
  • Taping specifications (Unit : mm) Open Anode.
  • Absolute maximum ratings (at Ta= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VR.

📥 Download Datasheet

Datasheet preview – RFN3BGE2S

Datasheet Details

Part number RFN3BGE2S
Manufacturer ROHM
File Size 1.25 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN3BGE2S Datasheet
Additional preview pages of the RFN3BGE2S datasheet.

📁 Similar Datasheet

  • RFN6BM2D - Ultrafast Rectifier (INCHANGE)
  • RFNL5TJ6S - Ultrafast Rectifier (INCHANGE)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
Super Fast Recovery Diode RFN3BGE2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1.6 1.6 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252GE JEITA : - TO-252 2.3 2.3 Structure Cathode Construction Silicon epitaxial planar type Taping specifications (Unit : mm) Open Anode Absolute maximum ratings (at Ta= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
Published: |