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RFN3BM2S - Super Fast Recovery Diode

Datasheet Summary

Features

  • 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date.
  • Construction Silicon epitaxial planar type.
  • Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3.
  • Structure Cathode Open Anode.
  • Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resi.

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Datasheet Details

Part number RFN3BM2S
Manufacturer ROHM
File Size 1.23 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN3BM2S Datasheet
Additional preview pages of the RFN3BM2S datasheet.

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Full PDF Text Transcription

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Super Fast Recovery Diode RFN3BM2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Open Anode Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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