RGT8TM65D Datasheet Field Stop Trench IGBT

Manufacturer: ROHM

Overview: RGT8TM65D 650V 4A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.) PD 650V 3A 1.

Datasheet Details

) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series).
Outline TO-220NFM.
Inner Circuit (2) (1)(2)(3).
1 (1) (3) (1) Gate (2) Collector (3) Emitter.
1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant.