RGT80TS65D Description
1/11 2014.05 - Rev.B RGT80TS65D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Unit - - 0.64 °C/W - - 2.00 °C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. 2/11 2014.05 - Rev.B RGT80TS65D Data Sheet lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.
RGT80TS65D Key Features
- Emitter Saturation Voltage
- Series)
- 1 Built in FRD
- free Lead Plating ; RoHS pliant