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RGT8NS65D - Field Stop Trench IGBT

Features

  • 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline LPDS / TO-262 (2) (1) (3) lInner Circuit (2).
  • 1 (1) (3) (1)(2)(3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant l.

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Datasheet Details

Part number RGT8NS65D
Manufacturer ROHM
File Size 520.47 KB
Description Field Stop Trench IGBT
Datasheet download datasheet RGT8NS65D Datasheet
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RGT8NS65D 650V 4A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 4A 1.
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