RGT8NS65D Description
Tstg -55 to +175 Unit V V A A A A A A W W °C °C .rohm. 1/11 2015.11 - Rev.C RGT8NS65D lThermal Resistance Parameter IGBT Junction - Case Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Unit - - 2.30 °C/W - - 8.70 °C/W lIGBT (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.
RGT8NS65D Key Features
- Emitter Saturation Voltage
- Series)
- free Lead Plating ; RoHS pliant