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Transistors
Switching (30V, 13A)
RSS130N03
RSS130N03
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8).
zApplication Power switching, DC/DC converter.
zStructure Silicon N-channel MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
(5)
(8)
Max.1.75 0.5±0.1
6.0±0.3 3.9±0.15
(4)
(1)
1.5±0.1 0.15
0.2±0.1
0.4±0.1
1.27
0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Source Current (Body Diode)
Continuous Pulsed
Total Power Dissipation
Channel Temperature
Storage Temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol VDSS VGSS ID IDP Is Isp PD Tch Tstg
Limits 30 20 ±13 ±52 1.6 6.
RSS130N03 Datasheet
