Datasheet4U Logo Datasheet4U.com

RSS120N03 - Transistor

Key Features

  • 1) Low on-resistance. www. DataSheet4U. com 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (5) (8) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zStructure Silicon N-channel MOS FET 1.27 0.4±0.1 0.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature ∗1 Pw≤10µs, Dut.

📥 Download Datasheet

Datasheet Details

Part number RSS120N03
Manufacturer ROHM
File Size 92.17 KB
Description Transistor
Datasheet download datasheet RSS120N03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RSS1C101MCN1GS Functional Polymer Aluminum Solid Electrolytic Capacitors Nichicon
RSS1E100MCN1GS Functional Polymer Aluminum Solid Electrolytic Capacitors Nichicon
RSS1E220MCN1GS Functional Polymer Aluminum Solid Electrolytic Capacitors Nichicon
RSS1E270MCN1GS Functional Polymer Aluminum Solid Electrolytic Capacitors Nichicon
RSS1E470MCN1GS Functional Polymer Aluminum Solid Electrolytic Capacitors Nichicon

Other Datasheets by ROHM

Part Number Description
RSS125N03 Transistor
RSS100N03 Transistors
RSS105N03 Transistor
RSS110N03 Transistor
RSS130N03 Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Unit : mm) SOP8 5.0±0.2 (5) (8) 6.0±0.3 3.9±0.15 1.5±0.1 0.15 zStructure Silicon N-channel MOS FET 1.27 0.4±0.1 0.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD zEquivalent circuit Limits 30 20 ±12 ±48 1.6 6.