RSS120N03
RSS120N03 is Transistor manufactured by ROHM.
Transistors
Switching (30V, 12A)
RSS120N03 z Features 1) Low on-resistance. .. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). z External dimensions (Unit : mm)
SOP8
5.0±0.2
(5) (8)
6.0±0.3 3.9±0.15
1.5±0.1 0.15 z Structure Silicon N-channel MOS FET
0.4±0.1 0.1 Each lead has same dimensions z Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD z Equivalent circuit
Limits 30 20 ±12 ±48 1.6 6.4 2 150
- 55 to +150 Unit V V A A A A W °C °C
(8) (7) (6) (5) (8) (7) (6) (5)
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
∗1 ∗1 ∗2
(1)
∗2 ∗1
Max.1.75 z Applications Power switching, DC / DC converter.
0.5±0.1
(1) (4)
0.2±0.1
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25°C)
Parameter Channel to ambient
∗MOUNTED ON A CERAMIC BOARD
Symbol Rth (ch-a)
Limits 62.5
Unit °C / W
∗
1/3
Transistors z Electrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance Forward transfer admittance .. Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Total gate charge Gate-source charge Gate-drain...
