RSS110N03
RSS110N03 is Transistor manufactured by ROHM.
Transistor
Switching (30V, ±11A)
RSS110N03 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). z External dimensions (Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3 3.9±0.15
1.5±0.1 0.15 z Applications Power switching, DC/DC converter.
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
0.4±0.1 0.1 Each lead has same dimensions z Structure
- Silicon N-channel MOS FET z Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2 ∗1
Max.1.75
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits 30 20 ±11 ±44 1.6 6.4 2 150
- 55 to +150
Unit V V A A A A W °C °C
∗1 ∗1 ∗2
0.5±0.1
(1) (4)
0.2±0.1
1/3
Transistor z Thermal resistance (Ta=25°C)
Parameter Channel to ambient
∗ Mounted on a ceramic board.
Symbol Rth...
