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S2303 - N-channel SiC power MOSFET

Datasheet Summary

Features

  • ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive.
  • Inner circuit (1) (2).
  • 1 (3) (1) Gate (2) Drain (3) Source.
  • 1 Body Diode.

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Datasheet Details

Part number S2303
Manufacturer ROHM
File Size 636.13 KB
Description N-channel SiC power MOSFET
Datasheet download datasheet S2303 Datasheet
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Full PDF Text Transcription

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S2303 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200 80m 40A*1 Datasheet Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive Inner circuit (1) (2) *1 (3) (1) Gate (2) Drain (3) Source *1 Body Diode Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS_surge*3 Tj Tstg Value 1200 40 140 6 to 22 10 to 26 175 55 to 175 Unit V A A V V °C °C www.rohm.
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