S2306
N-channel Si C power MOSFET bare die
VDSS RDS(on) (Typ.)
1200V 160m W 22A- 1
Data Sheet l Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive l Inner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
- 1 Body Diode l Application
- Solar inverters
- DC/DC converters
- Switch mode power supplies
- Induction heating
- Motor drives l Absolute maximum ratings (Ta = 25°C) Parameter
Drain
- Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate
- Source voltage (DC) Gate
- Source surge voltage (Tsurge ˂ 300nsec)
Junction temperature
Range of storage temperature
Symbol
VDSS ID
- 1 ID,pulse
- 2 VGSS VGSS-surge- 3 Tj Tstg
Value 1200
22 55 -6 to 22 -10 to 26 175 -55 to +175
Unit V A A V V °C °C
.rohm. © 2016 ROHM Co., Ltd. All rights reserved.
1/11
- Rev.C
Data Sheet l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ....
