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SCS110AM - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-220FM2L lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 10.
  • 1 40.
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Datasheet Details

Part number SCS110AM
Manufacturer ROHM
File Size 496.70 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS110AM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode SCS110AM lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-220FM2L lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 10*1 40*2 160*3 23*4 28*5 150 V V A A A A W °C Storage temperature Tstg -55 to +150 °C Junction to case Rth(j-c) 4.4 °C / W (*1)Tc=69°C (*2)PW=8.