Datasheet4U Logo Datasheet4U.com

SCS110KE2 - SiC Schottky Barrier Diode

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18.
  • Construction Silicon carbide epitaxial planer type 1.20 2.03 5.45 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode.
  • Absolute maximum ratings (Tj=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Symbol VRM VR Limits 1200 1200 Unit V V Continuous forward forward current.
  • 6 IF 5 / 10.
  • 1 A Surge no repetiti.

📥 Download Datasheet

Datasheet Details

Part number SCS110KE2
Manufacturer ROHM
File Size 495.61 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS110KE2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SCS1100P Schottky Barrier Rectifiers SeCoS
SCS1100V-C Schottky Barrier Rectifiers SeCoS
SCS110AG Schottky Barrier Rectifiers SeCoS
SCS1200P-C Schottky Barrier Rectifiers SeCoS
SCS120P Schottky Barrier Rectifiers SeCoS

Other Datasheets by ROHM

Part Number Description
SCS110KG SiC Schottky Barrier Diode
SCS110AM SiC Schottky Barrier Diode
SCS112AG SiC Schottky Barrier Diodes
SCS105KG SiC Schottky Barrier Diode
SCS106AG SiC Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiC Schottky Barrier Diode SCS110KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17 3.61 3.81 20.95 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type 1.20 2.03 5.45 0.