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SCS110KG
SiC Schottky Barrier Diode
VR 1200V IF 10A QC 34nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
lOutline
TO-220AC
Datasheet
(1)
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 -
SCS110KG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power dissipation Junction temperature
VRM 1200
VR 1200
IF 10*1
45*2
IFSM
190*3
IFRM
38*4
PD 100*5
Tj 175
Ran
SCS110KG Datasheet
