SCT2H12NY
SCT2H12NY is N-channel SiC power MOSFET manufactured by ROHM.
Features
1) Low on-resistance
2) Fast switching speed
3) Long creepage distance with no center lead
4) Simple to drive
5) Pb-free lead plating ; Ro HS pliant
- Application
- Auxilialy power supplies
- Switch mode power supplies
- Outline
TO-268-2L
(2)
- Inner circuit
(1) (3)
(2)
(1) Gate
(2) Drain
- 1 (3) Source
(1)
- 1 Body Diode
(3)
- Packaging specifications Packing
Embossed tape
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
24 400
Taping code
Marking
- Absolute maximum ratings (Ta = 25°C) Parameter
Drain
- Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate
- Source voltage...
