SCT2H12NZ
SCT2H12NZ is N-channel SiC power MOSFET manufactured by ROHM.
N-channel Si C power MOSFET
VDSS RDS(on) (Typ.)
ID PD
1700V 1.15W 3.7A 35W l Features 1) Low on-resistance
2) Fast switching speed
3) Long creepage distance
4) Simple to drive
5) Pb-free lead plating ; Ro HS pliant l Application
- Auxilialy power supplies
- Switch mode power supplies l Outline
TO-3PFM l Inner circuit
(1) Gate (2) Drain (3) Source
- 1 Body Diode l Packaging specifications Packing
Tube
Reel size (mm)
- Tape width (mm)
- Type
Basic ordering unit (pcs)
Taping code
C11
Marking
SCT2H12NZ l Absolute maximum ratings (Tvj = 25°C unless otherwise spesified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate
- Source voltage (DC)
Gate
- Source surge voltage (tsurge<300nsec) Power dissipation (Tc = 25°C) Virtual Junction temperature
Range of storage temperature
VDSS
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