30H10I Overview
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
30H10I Key Features
- Fast Switching
- Low ON Resistance(Rdson≤5.5mΩ)
- Low Gate Charge(Typical:43nC)
- Low Reverse Transfer Capacitance(Typical:215pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
