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30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤5.5mΩ).
  • Low Gate Charge(Typical:43nC).
  • Low Reverse Transfer Capacitance(Typical:215pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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Datasheet preview – 30H10I

Datasheet Details

Part number 30H10I
Manufacturer ROUM
File Size 847.66 KB
Description 100A 30V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet 30H10I Datasheet
Additional preview pages of the 30H10I datasheet.

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Full PDF Text Transcription

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30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.
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