30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤5.5mΩ).
Low Gate Charge(Typical:43nC).
Low Reverse Transfer Capacitance(Typical:215pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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30H10I 100a 30v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	30H10I
Manufacturer	ROUM
File Size	847.66 KB
Description	100A 30V N-channel Enhancement Mode Power MOSFET
Datasheet	30H10I Datasheet

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30H10K	100A 30V N-channel Enhancement Mode Power MOSFET

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30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.