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30H10K - N-Channel Enhancement Mode Power MOSFET

Description

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =100A RDS(ON).

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Datasheet preview – 30H10K

Datasheet Details

Part number 30H10K
Manufacturer TGD
File Size 1.18 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 30H10K Datasheet
Additional preview pages of the 30H10K datasheet.

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    Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.
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