30H10K
30H10K is 100A 30V N-channel Enhancement Mode Power MOSFET manufactured by ROUM.
- Part of the 30H10I comparator family.
- Part of the 30H10I comparator family.
Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the Ro HS standard.
2 Features
- Fast Switching
- Low ON Resistance(Rdson≤5.5mΩ)
- Low Gate Charge(Typical:43n C)
- Low Reverse Transfer Capacitance(Typical:215p F)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
3 Applications
- Power switching applications
- Inverter management system
- Electric Tools
- Automotive Electronics
VDSS = 30V RDS(on) （TYP)= 4mΩ
ID = 100A
TO-252B
TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Total Dissipation
Ta=25℃ TC=25℃
Junction Temperature storage Temperature
Maximum...
