ROUM 30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
| Part No. | 30H10K |
|---|---|
| Datasheet | 30H10K Download |
| Manufacturer | ROUM |
| Description | 100A 30V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2FEATURES
● Fast Switching● Low ON Resistance(Rdson≤5.5mΩ)
● Low Gate Charge(Typical:43nC)
● Low Reverse Transfer Capacitance(Typical:215pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test 3
APPLICATIONS
● Power switching applications● Inverter management system
● Electric Tools
● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche Energy(Note 5) Total Dissipation Ta=25℃ TC=25℃ Junction Temperature storage Temperature Maximum
