30H10K - 100A 30V N-channel Enhancement Mode Power MOSFET

Download the 30H10K datasheet PDF. This datasheet also covers the 30H10I variant, as both devices belong to the same 100a 30v n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤5.5mΩ).
Low Gate Charge(Typical:43nC).
Low Reverse Transfer Capacitance(Typical:215pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

📥 Download Datasheet

30H10K 100a 30v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (30H10I-ROUM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	30H10K
Manufacturer	ROUM
File Size	847.66 KB
Description	100A 30V N-channel Enhancement Mode Power MOSFET
Datasheet	30H10K Datasheet

📁 Similar Datasheet

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30H10K	N-Channel Enhancement Mode Power MOSFET	TGD
30H10K	N-Channel Trench Power MOSFET	FUMAN

Other Datasheets by ROUM

Part Number	Description
30H10I	100A 30V N-channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.