Datasheet4U.com

30H10K - N-Channel Trench Power MOSFET

Product Overview

FUMAN

📥 Download Datasheet

30H10K N-Channel Trench Power MOSFET by FUMAN - Datasheet Preview — Datasheet preview – 30H10K

Datasheet Details

Part number	30H10K
Manufacturer	FUMAN
File Size	681.30 KB
Description	N-Channel Trench Power MOSFET
Datasheet	30H10K Datasheet
Additional preview pages of the 30H10K datasheet.

Product details

Description

The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

Features

VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

📁 Similar Datasheet

30H10K - N-Channel Enhancement Mode Power MOSFET (TGD)
30H10K - 100A 30V N-channel Enhancement Mode Power MOSFET (ROUM)
30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET (ROUM)
30H150 - N-Channel MOSFET (FNK)
30H80 - N-Channel Enhancement Mode MOSFET (FNK)
30H80A - N-Channel Enhancement Mode MOSFET (FNK)
30H80G - N-Channel MOSFET (ALLPOWER)
30HC - Silicon Epitaxial Planar Zener Diodes (Semtech)

Other Datasheets by FUMAN

Published: May 25, 2019 |