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30H10K - N-Channel Trench Power MOSFET

Description

The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

This device is suitable for use as a wide variety of applications.

Features

  • VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – 30H10K

Datasheet Details

Part number 30H10K
Manufacturer FUMAN
File Size 681.30 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet 30H10K Datasheet
Additional preview pages of the 30H10K datasheet.

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    Full PDF Text Transcription

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    SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench Power MOSFET General Description The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =100A RDS(ON) < 4.
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