30H10K
30H10K is N-Channel Trench Power MOSFET manufactured by FUMAN.
Description
The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications.
Features
- VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
- Load switch
- Power management
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Schematic Diagram 30H10K
Marking and pin Assignment
TO-252(DPAK) top view
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol...
