30H10K - N-Channel Trench Power MOSFET

FUMAN

General Description

The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

This device is suitable for use as a wide variety of applications.

Key Features

VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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30H10K n-channel trench power mosfet by FUMAN - Datasheet Preview

Datasheet Details

Part number	30H10K
Manufacturer	FUMAN
File Size	681.30 KB
Description	N-Channel Trench Power MOSFET
Datasheet	30H10K Datasheet

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Full PDF Text Transcription for 30H10K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30H10K. For precise diagrams, tables, and layout, please refer to the original PDF.

SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench Power MOSFET General Description The 30H10K uses advanc...

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hannel Trench Power MOSFET General Description The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =100A RDS(ON) < 4.