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MMBT5550 - NPN Transistor

General Description

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"Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time.

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Key Features

  • Power dissipation PCM: 0.225 W(Tamb=25OC).
  • Collector current ICM: 0.6 A.
  • Collector-base voltage V(BR)CBO: 160 V.
  • Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC.

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Datasheet Details

Part number MMBT5550
Manufacturer Rectron
File Size 247.87 KB
Description NPN Transistor
Datasheet download datasheet MMBT5550 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC MECHANICA DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant *Lead: MIL-STD-202E method 208C guaranteed *Mounting position: Any *Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS Max. Steady State Power Dissipation (1) @TA=25oC Max.