Rectron Semiconductor MMBT5550
NPN Transistor
| Part No. | MMBT5550 |
|---|---|
| Datasheet | MMBT5550 Download |
| Manufacturer |  Rectron Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
* Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC MECHANICA DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant *Lead: MIL-STD-202E method 208C guaranteed *Mounting position: Any *Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.MAXIMUM RATINGS
(@ TA = 25OC unless otherwise noted) RATINGS Max. Steady State Power Dissipation (1) @TA=25oC Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTGELECTRICAL CHARACTERISTICS
(@ TA = 25OC unless otherwise noted) CHARACTERISTICS SYMBOL Thermal Resistance Junction to Ambient RQJA Notes : 1. Alumina=0.4*0.3*0.024 in. 99.5% alumina. 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
