MMBT5550 Description
MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN).
MMBT5550 Key Features
- Power dissipation PCM: 0.225 W(Tamb=25OC)
- Collector current ICM: 0.6 A
- Collector-base voltage V(BR)CBO: 160 V
- Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC
- Case: Molded plastic
- Epoxy: UL 94V-O rate flame retardant
- Lead: MIL-STD-202E method 208C guaranteed
- Mounting position: Any
- Weight: 0.008 gram
- VALUE 225 150