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RM12N650IP - N-Channel Super Junction Power MOSFET

Download the RM12N650IP datasheet PDF. This datasheet also covers the RM12N650LD variant, as both devices belong to the same n-channel super junction power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

with low gate charge.

power conversion, and industrial power applications.

Key Features

  • ƽ New technology for high voltage device ƽ Low on-resistance and low conduction losses ƽ Small package ƽ Ultra Low Gate Charge cause ƽ 100% Avalanche Tested ƽ ROHS compliant .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RM12N650LD-Rectron.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RM12N650IP
Manufacturer Rectron
File Size 622.21 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet RM12N650IP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RM12N650LD RM12N650IP N-Channel Super Junction Power MOSFETċ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.