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RM12N650LD - N-Channel Super Junction Power MOSFET

General Description

with low gate charge.

power conversion, and industrial power applications.

Key Features

  • ƽ New technology for high voltage device ƽ Low on-resistance and low conduction losses ƽ Small package ƽ Ultra Low Gate Charge cause ƽ 100% Avalanche Tested ƽ ROHS compliant .

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Datasheet Details

Part number RM12N650LD
Manufacturer Rectron
File Size 622.21 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet RM12N650LD Datasheet

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RM12N650LD RM12N650IP N-Channel Super Junction Power MOSFETċ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.