Datasheet Summary
P-ChannelEnhancement Mode Power MOSFET
Description
The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
VDS = -20V,ID = -4.1A
RDS(ON) <80m Ω @ VGS=-2.5V
RDS(ON)
GS=-4.5V
ESD: HBM >2000V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications Load switch Power management Halogen-free
Schematic diagram
DDS G
SOT23-6 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4P20
RM4P20E...