RM4P20ES6 Overview
The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
RM4P20ES6 datasheet PDF for P-Channel Enhancement Mode Power MOSFET.
| Part number | RM4P20ES6 |
|---|---|
| Datasheet | RM4P20ES6-Rectron.pdf |
| File Size | 623.73 KB |
| Manufacturer | Rectron |
| Description | P-Channel Enhancement Mode Power MOSFET |
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The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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