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RM4P20ES6 - P-Channel Enhancement Mode Power MOSFET

Description

The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -4.1A RDS(ON) 2000V High power and current handing capability Lead free product is acquired Surface mount package.

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Datasheet preview – RM4P20ES6

Datasheet Details

Part number RM4P20ES6
Manufacturer Rectron
File Size 623.73 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM4P20ES6 Datasheet
Additional preview pages of the RM4P20ES6 datasheet.

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Full PDF Text Transcription

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RM4P20ES6 P-ChannelEnhancement Mode Power MOSFET Description The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G General Features VDS = -20V,ID = -4.1A RDS(ON) <80m Ω @ VGS=-2.5V RDS(ON) GS=-4.
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