RMP3N90LD - N-Channel ENHANCEMENT MODE MOSFET

Rectron

Download the RMP3N90LD datasheet PDF. This datasheet also covers the RMP3N90IP variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.

Key Features

Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free.

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RMP3N90LD n-channel enhancement mode mosfet by Rectron - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RMP3N90IP-Rectron.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RMP3N90LD
Manufacturer	Rectron
File Size	597.52 KB
Description	N-Channel ENHANCEMENT MODE MOSFET
Datasheet	RMP3N90LD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy. Features Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free Application High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS VDS@Tjmax 900 V RDS(ON) TYP 2.8 Ω ID 3.0 A Schematic diagram Package Marking And Ordering Information Device Device Package Marking RMP3N90IP TO-251 3N900 RMP3N90LD TO-252 3N900 Table 1.