H5N2008P
Features
- Low on-resistance
- Low leakage current ..
- High speed switching
Outline
TO-3P
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 96 192 96 192 48 153 150 0.833 150
- 55 to +150 Unit V V A A A A A m J W °C/W °C °C
Rev.3.00 Nov.24.2004 page 1 of 6
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer...
