HAT2206C Description
HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.5.00 Jan 26, 2006.
HAT2206C Key Features
- Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V)
- Low drive current
- High density mounting
- 1.8 V gate drive devices