HAT2210R
Features
- Low on-resistance
- Capable of 4.5 V gate drive
- High density mounting
- Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>)
78 DD
56 DD
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S 1
MOS1
S 3
MOS2 and Schottky Barrier Diode
Absolute Maximum Ratings
Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation
Symbol VDSS VGSS ID
ID(pulse)Note1 IDR
Pch Note2
MOS1 30 ±20 7.5 60 7.5 1.5
MOS2 & SBD 30 ±12 8.0 64 8.0 1.5
Channel temperature
Tch
Storage temperature
Tstg
- 55 to +150
- 55 to +150
Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit V V A A A...
