HAT2217C
Features
- Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V)
- Low drive current.
- High density mounting
- 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK
- 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body
- Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR
Note 2
Ratings 60 +20 /
- 10 3 12 3
Unit V V A A A W °C °C
Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg
- 55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm), PW ≤ 5 s
Rev.3.00 May 19, 2005 page 1 of 6
Electrical Characteristics
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to...
