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RJK0223DNS - Silicon N Channel Power MOS FET

Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Pb-free.
  • Halogen-free Outline.

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Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0110 Rev1.10 May 16, 2012 Application DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.
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