RJK0226DNS
RJK0226DNS is manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 2.3 m typ. (at VGS = 8 V)
- Pb-free
- Halogen-free
Outline
Package name: 8pin HVSON(3333) 5 6 78 4 321
4 G
5 678 D DDD
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1...
