RJK0226DNS Datasheet Silicon N Channel Power MOS FET

Manufacturer: Renesas

Datasheet Details

Part number	RJK0226DNS
Manufacturer	Renesas
File Size	242.79 KB
Description	Silicon N Channel Power MOS FET
Download	RJK0226DNS Download (PDF)

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V).
Pb-free.
Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Ava.

Part Number	Description
RJK0222DNS	Silicon N Channel Power MOS FET
RJK0223DNS	Silicon N Channel Power MOS FET
RJK0204DPA	Silicon N Channel Power MOS FET
RJK0206DPA	Silicon N Channel Power MOS FET
RJK0208DPA	Silicon N Channel Power MOS FET
RJK0210DPA	N-Channel MOSFET
RJK0211DPA	N-Channel MOSFET
RJK0212DPA	N-Channel MOSFET
RJK0213DPA	Silicon N Channel Power MOS FET
RJK0214DPA	Silicon N Channel Power MOS FET