RJK03R4DPA - Built in SBD Dual N-channel Power MOS FET

Features

Low on-resistance.
Capable of 4.5 V gate drive.
High density mounting.
Pb-free.
Halogen-free Outline.

RJK03R4DPA built in sbd dual n-channel power mos fet by Renesas Technology - Datasheet Preview

Datasheet Details

Part number	RJK03R4DPA
Manufacturer	Renesas Electronics
File Size	381.22 KB
Description	Built in SBD Dual N-channel Power MOS FET
Datasheet	RJK03R4DPA Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0888EJ0110 Rev.1.10 Oct 29, 2012 Features  Low on-resistance  Capable of 4.

Published: Aug 18, 2015 |