RJK03R4DPA Description
Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0888EJ0110 Rev.1.10 Oct 29, 2012.
RJK03R4DPA Key Features
- Low on-resistance
- Capable of 4.5 V gate drive
- High density mounting
- Pb-free
- Halogen-free